| Citation: |
Xu Yue, Yan Feng, Li Zhiguo, Yang Fan, Wang Yonggang, Chang Jianguang. Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology[J]. Journal of Semiconductors, 2010, 31(9): 094003. doi: 10.1088/1674-4926/31/9/094003
Xu Y, Yan F, Li Z G, Yang F, Wang Y G, Chang J G. Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology[J]. J. Semicond., 2010, 31(9): 094003. doi: 10.1088/1674-4926/31/9/094003.
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Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology
doi: 10.1088/1674-4926/31/9/094003
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Abstract
The influence of shallow trench isolation (STI) on a 90 nm polysilicon–oxide–nitride–oxide–silicon structure non-volatile memory has been studied based on experiments. It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably. The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem. In order to mitigate the STI impact, an added boron implantation in the STI region is developed as a new solution. Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells, respectively. The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology. -
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