SEMICONDUCTOR TECHNOLOGY

Model analysis and experimental investigation of the friction torque during the CMP process

Guo Dongming, Xu Chi, Kang Renke and Jin Zhuji

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Abstract: A model for calculating friction torque during the chemical mechanical polishing (CMP) process is presented, and the friction force and torque detection experiments during the CMP process are carried out to verify the model. The results show that the model can well describe the feature of friction torque during CMP processing. The research results provide a theoretical foundation for the CMP endpoint detection method based on the change of the torque of the polishing head rotational spindle.

Key words: CMPfriction torqueendpoint detection

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    Received: 18 August 2015 Revised: 27 September 2010 Online: Published: 01 March 2011

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      Guo Dongming, Xu Chi, Kang Renke, Jin Zhuji. Model analysis and experimental investigation of the friction torque during the CMP process[J]. Journal of Semiconductors, 2011, 32(3): 036002. doi: 10.1088/1674-4926/32/3/036002 Guo D M, Xu C, Kang R K, Jin Z J. Model analysis and experimental investigation of the friction torque during the CMP process[J]. J. Semicond., 2011, 32(3): 036002. doi: 10.1088/1674-4926/32/3/036002.Export: BibTex EndNote
      Citation:
      Guo Dongming, Xu Chi, Kang Renke, Jin Zhuji. Model analysis and experimental investigation of the friction torque during the CMP process[J]. Journal of Semiconductors, 2011, 32(3): 036002. doi: 10.1088/1674-4926/32/3/036002

      Guo D M, Xu C, Kang R K, Jin Z J. Model analysis and experimental investigation of the friction torque during the CMP process[J]. J. Semicond., 2011, 32(3): 036002. doi: 10.1088/1674-4926/32/3/036002.
      Export: BibTex EndNote

      Model analysis and experimental investigation of the friction torque during the CMP process

      doi: 10.1088/1674-4926/32/3/036002
      • Received Date: 2015-08-18
      • Accepted Date: 2010-08-09
      • Revised Date: 2010-09-27
      • Published Date: 2011-02-23

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