Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 226-228

Fundamental technique of direct writing Electron beam Nano-Lithography

Liu Ming, Chen Baogin, Wang Yunxiang, Long Shibing, Lu Jing and Li Ling

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Abstract: Electron beam lithography (EBL) is a specialized technique for creating the extremely fine patterns by the modern electronics industry for integrated circuits. In this research, the main attention is focused on the technology of positive resistPMMA and chemically amplified negative resist-SAL6O1. The nano-level patterns are exposed by the above resists. E-beam/optical mix and match lithography is employed to improve the efficiency ofe-beam lithography. Both resize the pattern and dose modulation are devised to minimize the proximity effect.

Key words: electron beam lithography mix and match technology proximity effect correction

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Liu Ming, Chen Baogin, Wang Yunxiang, Long Shibing, Lu Jing, Li Ling. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Journal of Semiconductors, 2003, In Press. Liu M, C B, Wang Y X, Long S B, Lu J, Li L. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Chin. J. Semicond., 2003, 24(S1): 226.Export: BibTex EndNote
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      Liu Ming, Chen Baogin, Wang Yunxiang, Long Shibing, Lu Jing, Li Ling. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Journal of Semiconductors, 2003, In Press.

      Liu M, C B, Wang Y X, Long S B, Lu J, Li L. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Chin. J. Semicond., 2003, 24(S1): 226.
      Export: BibTex EndNote

      Fundamental technique of direct writing Electron beam Nano-Lithography

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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