Fig. 1.
The process flow of graphene contact devices
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Wenchao Min, Hao Sun, Qilian Zhang, Zhiying Chen, Yanhui Zhang, Guanghui Yu, Xiaowei Sun. A comparative study of Ge/Au/Ni/Au-based ohmic contact on graphene[J]. Journal of Semiconductors, 2014, 35(5): 056001. doi: 10.1088/1674-4926/35/5/056001
W C Min, H Sun, Q L Zhang, Z Y Chen, Y H Zhang, G H Yu, X W Sun. A comparative study of Ge/Au/Ni/Au-based ohmic contact on graphene[J]. J. Semicond., 2014, 35(5): 056001. doi: 10.1088/1674-4926/35/5/056001.
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A comparative study of Ge/Au/Ni/Au-based ohmic contact on graphene
doi: 10.1088/1674-4926/35/5/056001
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Abstract
Superior graphene-metal contacts can improve the performance of graphene devices. We report on an experimental demonstration of Ge/Au/Ni/Au-based ohmic contact on graphene. The transfer length method (TLM) is adopted to measure the resistivity of graphene-metal contacts. We designed a process flow, which can avoid residual photoresist at the interface of metal and graphene. Additionally, rapid thermal annealing (RTA) at different temperatures as a post-processing method is studied to improve graphene-metal contact. The results reveal that the contact resistivity of graphene and Ge/Au/Ni/Au can reach 10-5 Ω· cm2 after RTA, and that 350℃ is optimum annealing temperature for the contact of graphene-Ge/Au/Ni/Au. This paper provides guidance for fabrication and applications of graphene devices.-
Keywords:
- ohmic contact,
- graphene,
- anneal
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References
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