| Citation: |
Fan Chao, Chen Tangsheng, Yang Lijie, Feng Ou, Jiao Shilong, Wu Yunfeng, Ye Yutang. 10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier[J]. Journal of Semiconductors, 2009, 30(10): 105009. doi: 10.1088/1674-4926/30/10/105009
Fan C, Chen T S, Yang L J, Feng O, Jiao S L, Wu Y F, Ye Y T. 10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier[J]. J. Semicond., 2009, 30(10): 105009. doi: 10.1088/1674-4926/30/10/105009.
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10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier
doi: 10.1088/1674-4926/30/10/105009
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Abstract
A 10 Gb/s OEIC (optoelectronic integrated circuit) optical receiver front-end has been studied and fabricated based on the ϕ-76 mm GaAs PHEMT process; this is the first time that a limiting amplifier (LA) has been designed and realized using depletion mode PHEMT. An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier (TIA) has been established and optimized by simulation software ATLAS. The photodiode has a bandwidth of 10 GHz, a capacitance of 3 fF/μm and a photosensitive area of 50×50 μm2 . The whole chip has an area of 1511 × 666 μm2. The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS. The chip area is 1950 × 1910 μm2 and the measured results demonstrate an input dynamic range of 34 dB (10–500 mVpp) with constant output swing of 500 mVpp.-
Keywords:
- OEIC
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References
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Proportional views
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