J. Semicond. > 2014, Volume 35 > Issue 9 > 092003, doi: 10.1088/1674-4926/35/9/092003
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SEMICONDUCTOR PHYSICS

A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating

Zhiming Li1, , Hailing Li2, Xiaobing Gan3, Haiying Jiang1, Jinping Li1, Xiaoqian Fu1, Yanbin Han1, Yingjie Xia1, Jianqin Yin1, Yimei Huang1 and Shigang Hu4

+ Author Affiliations

 Corresponding author: Li Zhiming, Email:zmli686@163.com

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Abstract: By using the numerical simulation for the temperature field in the metal organic vapor deposition (MOCVD) reactor by induction heating, it is found that the temperature distribution in the conventional cylinder-shaped susceptor is nonuniform due to the skin effect of the induced current, which makes the temperature distribution of the wafer nonuniform. Therefore, a novel susceptor with a ⊥-shaped slot is proposed. This slot changes the mode and the rate of the heat transfer in the susceptor, which improves the uniformity of the temperature distribution in the wafer. By using the finite element method (FEM), the susceptor with this structure for heating a wafer of four inches in diameter is optimized. It is observed that the optimized susceptor with the ⊥-shaped slot makes the uniformity of the temperature distribution in the wafer improve by more than 85%, and a good uniformity of temperature distributions is kept under different wafer temperatures, which may be beneficial to the film growth.

Key words: induction heat, MOCVD, finite element analysis, temperature field



[1]
Lundin W V, Nikolaev A E, Yagovkina M A, et al. High growth rate MOVPE of Al(Ga)N in planetary reactor. J Cryst Growth, 2012, 352:209 doi: 10.1016/j.jcrysgro.2011.11.045
[2]
Liang Meng, Wang Guohong, Li Hongjian, et al. Low threading dislocation density in GaN films grown on patterned sapphire substrates. Journal of Semiconductors, 2012, 33(11):113002 doi: 10.1088/1674-4926/33/11/113002
[3]
Yang Zhen, Wang Jinyan, Xu Zhe, et al. Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress. Journal of Semiconductors, 2014, 35(1):014007 doi: 10.1088/1674-4926/35/1/014007
[4]
Xu S R, Hao Y, Zhang J C, et al. Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition. J Cryst Growth, 2010, 312:3521 doi: 10.1016/j.jcrysgro.2010.09.026
[5]
Zhu Shaoxin, Yan Jianchang, Zeng Jianping, et al. The effect of δ -doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD. Journal of Semiconductors, 2013, 34(5):053004 doi: 10.1088/1674-4926/34/5/053004
[6]
Gu Guodong, Dun Shaobo, Lü Yuanjie, et al. Low ohmic contact AlN/GaN HEMTs grown by MOCVD. Journal of Semiconductors, 2013, 34(11):114004 doi: 10.1088/1674-4926/34/11/114004
[7]
Xu Shengrui, Hao Yue, Zhang Jincheng, et al. Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition. Nano Lett, 2013, 13:3654 doi: 10.1021/nl4015205
[8]
Tao Tao, Zhang Zhao, Liu Lian, et al. Surface morphology and composition studies in InGaN/GaN film grown by MOCVD. Journal of Semiconductors, 2011, 32(8):083002 doi: 10.1088/1674-4926/32/8/083002
[9]
Chen Xinliang, Yan Congbo, Geng Xinhua, et al. Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells. Journal of Semiconductors, 2014, 35(4):043002 doi: 10.1088/1674-4926/35/4/043002
[10]
Liu Bo, Feng Zhihong, Zhang Sen, et al. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate. Journal of Semiconductors, 2011, 32(12):124003 doi: 10.1088/1674-4926/32/12/124003
[11]
Tao Zhikuo, Zhanag Rong, Xiu Xiangqian, et al. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD. Journal of Semiconductors, 2012, 33(7):073002 doi: 10.1088/1674-4926/33/7/073002
[12]
Gu Chengyan, Lee Chengming, Liu Xianglin, Design of a three-layer hot-wall horizontal flow MOCVD reactor. Journal of Semiconductors, 2012, 33(9):093005 doi: 10.1088/1674-4926/33/9/093005
[13]
Pantzas K, Gmili Y E, Dickerson J, et al. Semibulk InGaN:a novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE. J Cryst Growth, 2013, 370:57 doi: 10.1016/j.jcrysgro.2012.08.041
[14]
Wang Chong, Chen Chong, He Yunlong, et al. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs. Journal of Semiconductors, 2014, 35(1):014008 doi: 10.1088/1674-4926/35/1/014008
[15]
Ludewig P, Knaub N, Stolz W, et al. MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures. J Cryst Growth, 2013, 370:186 doi: 10.1016/j.jcrysgro.2012.07.002
[16]
Abedi S, Farhadi F, Boozarjomehry R B. Integration of CFD and Nelder-Mead algorithm for optimization of MOCVD process in an atmospheric pressure vertical rotating disk reactor. International Communications in Heat and Mass Transfer, 2013, 43:138 doi: 10.1016/j.icheatmasstransfer.2013.01.003
[17]
Hirako A, Ohkawa K. Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state. J Cryst Growth, 2005, 276:57 doi: 10.1016/j.jcrysgro.2004.11.373
[18]
Jing Liang, Xiao Hongling, Wang Xiaoliang, et al. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD. Journal of Semiconductors, 2013, 34(11):113002 doi: 10.1088/1674-4926/34/11/113002
[19]
Bergunde T, Henninger B, Unenbürger M, et al. Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors. J Cryst Growth, 2003, 248:235 doi: 10.1016/S0022-0248(02)01856-0
[20]
Huang M S, Huang Y L. Effect of multi-layered induction coils on efficiency and uniformity of surface heating. International Journal of Heat and Mass Transfer, 2010, 53:2414 doi: 10.1016/j.ijheatmasstransfer.2010.01.042
[21]
Tavakoli M H, Manesh E M, Ojaghi A. Influence of crucible geometry and position on the induction heating process in crystal growth systems. J Cryst Growth, 2009, 311:4281 doi: 10.1016/j.jcrysgro.2009.07.013
[22]
Tavakoli M H, Karbaschi H, Samavat F, et al. Numerical study of induction heating in melt growth systems-frequency selection. J Cryst Growth, 2010, 312:3198 doi: 10.1016/j.jcrysgro.2010.07.035
[23]
Tavakoli M H, Ojaghi A, Mohammadi-Manesh E, et al. Influence of coil geometry on the induction heating process in crystal growth systems. J Cryst Growth, 2009, 311:1594 doi: 10.1016/j.jcrysgro.2009.01.092
[24]
Gurary A I, Fabiano P T, Voorhees D R, et al. Induction heated chemical vapor deposition reactor. United States Patent, 2002, Patent No. US6368404B1
[25]
Li Z M, Li J P, Jiang H Y, et al. Effect of thermocouple position on temperature field in nitride MOCVD reactor. J Cryst Growth, 2013, 368:29 doi: 10.1016/j.jcrysgro.2013.01.005
[26]
Zhang Jincheng, Li Zhiming, Hao Yue, et al. Finite element analysis and optimization of temperature field in GaN-MOCVD reactor. Science China Information Sciences, 2010, 53:2138 doi: 10.1007/s11432-010-4067-9
[27]
Chen Q S, Gao P, Hu W R. Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system. J Cryst Growth, 2004, 266:320 doi: 10.1016/j.jcrysgro.2004.02.061
[28]
Mercier F, Dedulle J M, Chaussende D, et al. Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth. J Cryst Growth, 2010, 312:155 doi: 10.1016/j.jcrysgro.2009.10.007
Fig. 1.  Simulation model of MOCVD reactor(with conventional susceptor)(a)and susceptor with $\wedge$-shaped slot(b)

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Fig. 2.  Temperature distributions (a) in a conventional susceptor and (b) in a susceptor with the $ \wedge $-shaped slot (including wafer)

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Fig. 3.  Temperature distribution curves in wafer on susceptor with different ${y_{\text{a}}}$ (a) and their numerical characteristics (b)

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Fig. 4.  Temperature radial distribution curves in wafer on the conventional susceptor and the optimized susceptor

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Fig. 5.  Standard deviations changing with average temperatures of wafer

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[1]
Lundin W V, Nikolaev A E, Yagovkina M A, et al. High growth rate MOVPE of Al(Ga)N in planetary reactor. J Cryst Growth, 2012, 352:209 doi: 10.1016/j.jcrysgro.2011.11.045
[2]
Liang Meng, Wang Guohong, Li Hongjian, et al. Low threading dislocation density in GaN films grown on patterned sapphire substrates. Journal of Semiconductors, 2012, 33(11):113002 doi: 10.1088/1674-4926/33/11/113002
[3]
Yang Zhen, Wang Jinyan, Xu Zhe, et al. Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress. Journal of Semiconductors, 2014, 35(1):014007 doi: 10.1088/1674-4926/35/1/014007
[4]
Xu S R, Hao Y, Zhang J C, et al. Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition. J Cryst Growth, 2010, 312:3521 doi: 10.1016/j.jcrysgro.2010.09.026
[5]
Zhu Shaoxin, Yan Jianchang, Zeng Jianping, et al. The effect of δ -doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD. Journal of Semiconductors, 2013, 34(5):053004 doi: 10.1088/1674-4926/34/5/053004
[6]
Gu Guodong, Dun Shaobo, Lü Yuanjie, et al. Low ohmic contact AlN/GaN HEMTs grown by MOCVD. Journal of Semiconductors, 2013, 34(11):114004 doi: 10.1088/1674-4926/34/11/114004
[7]
Xu Shengrui, Hao Yue, Zhang Jincheng, et al. Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition. Nano Lett, 2013, 13:3654 doi: 10.1021/nl4015205
[8]
Tao Tao, Zhang Zhao, Liu Lian, et al. Surface morphology and composition studies in InGaN/GaN film grown by MOCVD. Journal of Semiconductors, 2011, 32(8):083002 doi: 10.1088/1674-4926/32/8/083002
[9]
Chen Xinliang, Yan Congbo, Geng Xinhua, et al. Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells. Journal of Semiconductors, 2014, 35(4):043002 doi: 10.1088/1674-4926/35/4/043002
[10]
Liu Bo, Feng Zhihong, Zhang Sen, et al. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate. Journal of Semiconductors, 2011, 32(12):124003 doi: 10.1088/1674-4926/32/12/124003
[11]
Tao Zhikuo, Zhanag Rong, Xiu Xiangqian, et al. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD. Journal of Semiconductors, 2012, 33(7):073002 doi: 10.1088/1674-4926/33/7/073002
[12]
Gu Chengyan, Lee Chengming, Liu Xianglin, Design of a three-layer hot-wall horizontal flow MOCVD reactor. Journal of Semiconductors, 2012, 33(9):093005 doi: 10.1088/1674-4926/33/9/093005
[13]
Pantzas K, Gmili Y E, Dickerson J, et al. Semibulk InGaN:a novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE. J Cryst Growth, 2013, 370:57 doi: 10.1016/j.jcrysgro.2012.08.041
[14]
Wang Chong, Chen Chong, He Yunlong, et al. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs. Journal of Semiconductors, 2014, 35(1):014008 doi: 10.1088/1674-4926/35/1/014008
[15]
Ludewig P, Knaub N, Stolz W, et al. MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures. J Cryst Growth, 2013, 370:186 doi: 10.1016/j.jcrysgro.2012.07.002
[16]
Abedi S, Farhadi F, Boozarjomehry R B. Integration of CFD and Nelder-Mead algorithm for optimization of MOCVD process in an atmospheric pressure vertical rotating disk reactor. International Communications in Heat and Mass Transfer, 2013, 43:138 doi: 10.1016/j.icheatmasstransfer.2013.01.003
[17]
Hirako A, Ohkawa K. Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state. J Cryst Growth, 2005, 276:57 doi: 10.1016/j.jcrysgro.2004.11.373
[18]
Jing Liang, Xiao Hongling, Wang Xiaoliang, et al. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD. Journal of Semiconductors, 2013, 34(11):113002 doi: 10.1088/1674-4926/34/11/113002
[19]
Bergunde T, Henninger B, Unenbürger M, et al. Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors. J Cryst Growth, 2003, 248:235 doi: 10.1016/S0022-0248(02)01856-0
[20]
Huang M S, Huang Y L. Effect of multi-layered induction coils on efficiency and uniformity of surface heating. International Journal of Heat and Mass Transfer, 2010, 53:2414 doi: 10.1016/j.ijheatmasstransfer.2010.01.042
[21]
Tavakoli M H, Manesh E M, Ojaghi A. Influence of crucible geometry and position on the induction heating process in crystal growth systems. J Cryst Growth, 2009, 311:4281 doi: 10.1016/j.jcrysgro.2009.07.013
[22]
Tavakoli M H, Karbaschi H, Samavat F, et al. Numerical study of induction heating in melt growth systems-frequency selection. J Cryst Growth, 2010, 312:3198 doi: 10.1016/j.jcrysgro.2010.07.035
[23]
Tavakoli M H, Ojaghi A, Mohammadi-Manesh E, et al. Influence of coil geometry on the induction heating process in crystal growth systems. J Cryst Growth, 2009, 311:1594 doi: 10.1016/j.jcrysgro.2009.01.092
[24]
Gurary A I, Fabiano P T, Voorhees D R, et al. Induction heated chemical vapor deposition reactor. United States Patent, 2002, Patent No. US6368404B1
[25]
Li Z M, Li J P, Jiang H Y, et al. Effect of thermocouple position on temperature field in nitride MOCVD reactor. J Cryst Growth, 2013, 368:29 doi: 10.1016/j.jcrysgro.2013.01.005
[26]
Zhang Jincheng, Li Zhiming, Hao Yue, et al. Finite element analysis and optimization of temperature field in GaN-MOCVD reactor. Science China Information Sciences, 2010, 53:2138 doi: 10.1007/s11432-010-4067-9
[27]
Chen Q S, Gao P, Hu W R. Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system. J Cryst Growth, 2004, 266:320 doi: 10.1016/j.jcrysgro.2004.02.061
[28]
Mercier F, Dedulle J M, Chaussende D, et al. Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth. J Cryst Growth, 2010, 312:155 doi: 10.1016/j.jcrysgro.2009.10.007

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    Received: 13 January 2014 Revised: 21 April 2014 Online: Published: 01 September 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(9): 092003
      Zhiming Li, Hailing Li, Xiaobing Gan, Haiying Jiang, Jinping Li, Xiaoqian Fu, Yanbin Han, Yingjie Xia, Jianqin Yin, Yimei Huang, Shigang Hu. A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating[J]. Journal of Semiconductors, 2014, 35(9): 092003. doi: 10.1088/1674-4926/35/9/092003 Z M Li, H L Li, X B Gan, H Y Jiang, J P Li, X Q Fu, Y B Han, Y J Xia, J Q Yin, Y M Huang, S G Hu. A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating[J]. J. Semicond., 2014, 35(9): 092003. doi:  10.1088/1674-4926/35/9/092003.Export: BibTex EndNote
      Citation:
      Zhiming Li, Hailing Li, Xiaobing Gan, Haiying Jiang, Jinping Li, Xiaoqian Fu, Yanbin Han, Yingjie Xia, Jianqin Yin, Yimei Huang, Shigang Hu. A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating[J]. Journal of Semiconductors, 2014, 35(9): 092003. doi: 10.1088/1674-4926/35/9/092003

      Z M Li, H L Li, X B Gan, H Y Jiang, J P Li, X Q Fu, Y B Han, Y J Xia, J Q Yin, Y M Huang, S G Hu. A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating[J]. J. Semicond., 2014, 35(9): 092003. doi:  10.1088/1674-4926/35/9/092003.
      Export: BibTex EndNote
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      A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating

      doi: 10.1088/1674-4926/35/9/092003
      • 1.

        Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Ji'nan 250022, China

      • 2.

        Shandong College of Electronic Technology, Ji'nan 250022, China

      • 3.

        College of Management, Shenzhen University, Shenzhen 518060, China

      • 4.

        School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China

      Funds:

      and the National Natural Science Foundation of China 61376076

      the Foundation of Hunan Province 2012GK3103

      Project supported by the Foundation of Hunan Province (No. 2012GK3103), the Scientific Research Fund of Hunan Provincial Education Department (No. 12C0108), and the National Natural Science Foundation of China (No. 61376076)

      the Scientific Research Fund of Hunan Provincial Education Department 12C0108

      More Information
      • Corresponding author: Li Zhiming, Email:zmli686@163.com
      • Received Date: 2014-01-13
      • Revised Date: 2014-04-21
      • Published Date: 2014-09-01

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