Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 402-408
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TFSOI RESURF功率器件表面电场分布和优化设计的新解析模型(英文)

何进 , 张兴 , 黄如 and 王阳元

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Key words: TFSOI RESURF器件, 表面电场分布, 电势分布, 击穿电压, 优化设计

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 402-408
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      • Received Date: 2015-08-20

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