Fig. 1.
(a) A single stage of the push-pull inverter. (b) The equivalent small signal model.
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| Citation: |
Lianxi Liu, Jiao Zou, Yunfei En, Shubin Liu, Yue Niu, Zhangming Zhu, Yintang Yang. A high gain wide dynamic range transimpedance amplifier for optical receivers[J]. Journal of Semiconductors, 2014, 35(1): 015001. doi: 10.1088/1674-4926/35/1/015001
L X Liu, J Zou, Y F En, S B Liu, Y Niu, Z M Zhu, Y T Yang. A high gain wide dynamic range transimpedance amplifier for optical receivers[J]. J. Semicond., 2014, 35(1): 015001. doi: 10.1088/1674-4926/35/1/015001.
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A high gain wide dynamic range transimpedance amplifier for optical receivers
doi: 10.1088/1674-4926/35/1/015001
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Abstract
As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range (DR) to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/$\sqrt {{\rm{Hz}}}$ within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage. -
References
[1] Kamrani E, Sawan M. Fully integrated CMOS avalanche photodiode and distributed-gain TIA for CW-fNIRS. IEEE Biomedical Circuits and Systems Conference, San Francisco, CA, 2011:317 http://ieeexplore.ieee.org/document/6107791/[2] Micusik D, Zimmermann H. A 240 MHz-BW 112 dB-DR TIA. IEEE International Solid-State Circuits Conference, San Francisco, CA, 2007:554[3] Huang Beiju, Zhang Xu, Chen Hongda. 1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications. Journal of Semiconductors, 2009, 30(10):105005 doi: 10.1088/1674-4926/30/10/105005[4] Tian Jun, Wang Zhigong, Liang Bangli, et al. A CMOS 1.4 THzΩ 155 Mb/s differential transimpedance preamplifier for optical receiver. Chinese Journal of Semiconductors, 2004, 25(11):1486[5] Xu Hui, Feng Jun, Liu Quan, et al. A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35μm CMOS. Journal of Semiconductors, 2011, 32(10):105003 doi: 10.1088/1674-4926/32/10/105003[6] Aznar F, Celma S, Calvo B, et al. A 0.18μm CMOS integrated transimpedance amplifier-equalizer for 2.5 Gb/s. 53rd IEEE International Midwest Symposium on Circuits and Systems, Seattle, WA, 2010, 40:604[7] Micusik D, Zimmermann H. 130 dB-DR transimpedance amplifier with monotonic logarithmic compression and high-current monitor. IEEE International Solid-State Circuits Conference, San Francisco, CA, 2008:78 http://ieeexplore.ieee.org/document/4523065/?arnumber=4523065&sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number:4523032)%26rowsPerPage%3D75[8] Guermaz M B, Bouzerara L, Escid H, et al. Low-noise and high-bandwidth 0.8μm CMOS transimpedance amplifier for optical receiver circuit. Journal of Circuits, Systems, and Computers, 2005, 14(2):267 doi: 10.1142/S0218126605002258[9] Sansen W M C. Analog design essentials. The International Series in Engineering and Computer Science, 2006, 859:391[10] Hammoudi E, Mokhtar A. 2.75 GHz low noise 0.35μm CMOS transimpedance amplifier. 18th Mediterranean Conference on Control & Automation, Marrakech, Morocco, 2010:928[11] Xue Zhaofeng, Li Zhiqun, Wang Zhigong, et al. A low noise 1.25Gb/s front-end amplifier for optical receivers. Chinese Journal of Semiconductors, 2006, 27(8):1373 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX200608008.htm[12] Yu G, Zou X, Zhang L, et al. A low-noise high-gain transimpedance amplifier with high dynamic range in 0.13μm CMOS. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, Singapore, 2012:37[13] Hassan M, Zimmermann H. An 85 dB dynamic range transimpedance amplifier in 40 nm CMOS technology. IEEE NORCHIP, Lund, 2011:1[14] [15] [16] -
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