Chin. J. Semicond. > 2007, Volume 28 > Issue 6 > 873-877

PAPERS

Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping

Zhao Chuanzhen, Tang Jiyu, Wen Yuhua, Wu Liangzhen and Kong Yunting

+ Author Affiliations

PDF

Abstract: A model for the built-in electric field in the base is developed and calculated analytically.The model is suitable for a base with a Gaussian doping distribution and different Ge profiles (e.g.,triangle,box-triangle).A new formula for the valence band effective states is obtained,and the effect of the conduction band effective states on the built-in electric field is considered for the first time.It is found that the effect of the Ge fraction on the built-in electric field is larger than that of impurities.When the Ge fraction profile is triangular,the built-in electric field increases gradually from emission to collector with the total Ge fraction.At a given location x,the built-in electric field becomes larger and larger with the increasing of the total Ge fraction.When the Ge fraction profile is box-triangular,the built-in electric field increases from emission junction to collector for a given x1 and a given Ge fraction yc.For an invariable Ge fraction profile,the built-in electric field is nearly invariable.For a linearly graded Ge fraction profile,the built-in electric field becomes larger and larger with the increasing of x1.In addition,there is a sharp drop near x1.

Key words: SiGe alloy built-in electric fieldtriangular Ge profilebox-triangular Ge profile Gaussian doping distribution

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3165 Times PDF downloads: 1445 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 22 December 2006 Online: Published: 01 June 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Chuanzhen, Tang Jiyu, Wen Yuhua, Wu Liangzhen, Kong Yunting. Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping[J]. Journal of Semiconductors, 2007, In Press. Zhao C Z, Tang J Y, Wen Y H, Wu L Z, Kong Y T. Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping[J]. Chin. J. Semicond., 2007, 28(6): 873.Export: BibTex EndNote
      Citation:
      Zhao Chuanzhen, Tang Jiyu, Wen Yuhua, Wu Liangzhen, Kong Yunting. Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping[J]. Journal of Semiconductors, 2007, In Press.

      Zhao C Z, Tang J Y, Wen Y H, Wu L Z, Kong Y T. Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping[J]. Chin. J. Semicond., 2007, 28(6): 873.
      Export: BibTex EndNote

      Physical Mechanism of the Built-In Electric Field for SiGe HBT with Heavy p-Doping

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-17
      • Revised Date: 2006-12-22
      • Published Date: 2007-05-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return