Fig. 1.
Image of the adhesion tests.
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Linchao Han, Huajun Shen, Kean Liu, Yiyu Wang, Yidan Tang, Yun Bai, Hengyu Xu, Yudong Wu, Xinyu Liu. Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni[J]. Journal of Semiconductors, 2014, 35(7): 072003. doi: 10.1088/1674-4926/35/7/072003
L C Han, H J Shen, K A Liu, Y Y Wang, Y D Tang, Y Bai, H Y Xu, Y D Wu, X Y Liu. Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni[J]. J. Semicond., 2014, 35(7): 072003. doi: 10.1088/1674-4926/35/7/072003.
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Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni
doi: 10.1088/1674-4926/35/7/072003
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Abstract
The Ni/Ti/Ni multilayer ohmic contact properties on a 4H-SiC substrate and improved adhesion with the Ti/Au overlayer have been investigated. The best specific contact resistivity of 3.16×10-5 Ω·cm2 was obtained at 1050℃. Compared with Ni/SiC ohmic contact, the adhesion between Ni/Ti/Ni/SiC and the Ti/Au overlayer was greatly improved and the physical mechanism under this behavior was analyzed by using Raman spectroscopy and X-ray energy dispersive spectroscopy (EDS) measurement. It is shown that a Ti-carbide and Ni-silicide compound exist at the surface and there is no graphitic carbon at the surface of the Ni/Ti/Ni structure by Raman spectroscopy, while a large amount of graphitic carbon appears at the surface of the Ni/SiC structure, which results in its bad adhesion. Moreover, the interface of the Ni/Ti/Ni/SiC is improved compared to the interface of Ni/SiC.-
Keywords:
- ohmic contact,
- SiC,
- Ni/Ti/Ni,
- Ni2Si
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References
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