Fig. 1.
(a). Designed structure of the Al0.13GaInP sub-cell. (b) Calculated equilibrium band diagram of the Al0.13GaInP sub-cell
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Hongbo Lu, Xinyi Li, Wei Zhang, Dayong Zhou, Mengqi Shi, Lijie Sun, Kaijian Chen. A 2.05 eV AlGaInP sub-cell used in next generation solar cells[J]. Journal of Semiconductors, 2014, 35(9): 094010. doi: 10.1088/1674-4926/35/9/094010
H B Lu, X Y Li, W Zhang, D Y Zhou, M Q Shi, L J Sun, K J Chen. A 2.05 eV AlGaInP sub-cell used in next generation solar cells[J]. J. Semicond., 2014, 35(9): 094010. doi: 10.1088/1674-4926/35/9/094010.
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A 2.05 eV AlGaInP sub-cell used in next generation solar cells
doi: 10.1088/1674-4926/35/9/094010
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Abstract
An Al0.13GaInP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced by the high Al-content materials on the cell performance during MOCVD growth. Hetero-structures are employed to confirm the origin of the decreasing short circuit current density compared to a GaInP single junction solar cell. An effective method to improve the performance of broadband solar cells by increasing Isc with a cost of Voc was proposed.-
Keywords:
- broadband,
- solar cell,
- heterojunction
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References
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