| Citation: |
Wang Zhongjian, Cheng Xinhong, Xia Chao, Xu Dawei, Cao Duo, Song Zhaorui, Yu Yuehui, Shen Dashen. A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate[J]. Journal of Semiconductors, 2012, 33(5): 054003. doi: 10.1088/1674-4926/33/5/054003
Wang Z J, Cheng X H, Xia C, Xu D W, Cao D, Song Z R, Yu Y H, Shen D S. A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate[J]. J. Semicond., 2012, 33(5): 054003. doi: 10.1088/1674-4926/33/5/054003.
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A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate
doi: 10.1088/1674-4926/33/5/054003
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Abstract
A 680 V LDMOS on a thin SOI with an improved field oxide (FOX) and dual field plate was studied experimentally. The FOX structure was formed by an "oxidation-etch-oxidation" process, which took much less time to form, and had a low protrusion profile. A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance. An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field. Using a SimBond SOI wafer with a 1.5 μm top silicon and a 3 μm buried oxide layer, CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V, and the specific on-resistance was 8.2 Ω.mm2.-
Keywords:
- SOI LDMOS,
- field oxide,
- field plate,
- breakdown voltage,
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References
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