SEMICONDUCTOR TECHNOLOGY

Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process

Shang Haiping and Xu Qiuxia

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Abstract: The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH (Schottky barrier height) is described. Adopting the analysis of the I–V characteristic curve and extrapolating the SBH of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), the effects of different of process parameters dopant segregation, including segregation anneal temperature and dopant implant dose, on the properties of the NiSi/n-Si SJDs have been studied, and the corresponding mechanisms are discussed.

Key words: NiSi/n-Si SJD SBH dopant segregation

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    Received: 18 August 2015 Revised: 23 April 2009 Online: Published: 01 October 2009

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      Shang Haiping, Xu Qiuxia. Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process[J]. Journal of Semiconductors, 2009, 30(10): 106001. doi: 10.1088/1674-4926/30/10/106001 Shang H P, Xu Q X. Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process[J]. J. Semicond., 2009, 30(10): 106001. doi: 10.1088/1674-4926/30/10/106001.Export: BibTex EndNote
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      Shang Haiping, Xu Qiuxia. Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process[J]. Journal of Semiconductors, 2009, 30(10): 106001. doi: 10.1088/1674-4926/30/10/106001

      Shang H P, Xu Q X. Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process[J]. J. Semicond., 2009, 30(10): 106001. doi: 10.1088/1674-4926/30/10/106001.
      Export: BibTex EndNote

      Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process

      doi: 10.1088/1674-4926/30/10/106001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-27
      • Revised Date: 2009-04-23
      • Published Date: 2009-09-28

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