Chin. J. Semicond. > 2005, Volume 26 > Issue 12 > 2428-2432

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Degradation in Flash Memory Under Low Electric Field Stress

Zheng Xuefeng, Hao Yue, Liu Hongxia and Ma Xiaohua

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Abstract: Based on the negative gate source-side erased flash memory cell,three conduction mechanisms causing stress-induced leakage current are studied.The voltage shifts which cause steady-state and transient currents are measured by new experimental methods.The reliability of flash memory cells is investigated using the capacitance coupling effect model.The results show that the cell reliability under a low electric field stress is mainly affected by the carriers charging and discharging inside the oxide.

Key words: flash memorystress induced leakage currentlow electric field stresscapacitance coupling effect

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Zheng Xuefeng, Hao Yue, Liu Hongxia, Ma Xiaohua. Degradation in Flash Memory Under Low Electric Field Stress[J]. Journal of Semiconductors, 2005, In Press. Zheng X F, Hao Y, Liu H X, Ma X H. Degradation in Flash Memory Under Low Electric Field Stress[J]. Chin. J. Semicond., 2005, 26(12): 2428.Export: BibTex EndNote
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      Zheng Xuefeng, Hao Yue, Liu Hongxia, Ma Xiaohua. Degradation in Flash Memory Under Low Electric Field Stress[J]. Journal of Semiconductors, 2005, In Press.

      Zheng X F, Hao Y, Liu H X, Ma X H. Degradation in Flash Memory Under Low Electric Field Stress[J]. Chin. J. Semicond., 2005, 26(12): 2428.
      Export: BibTex EndNote

      Degradation in Flash Memory Under Low Electric Field Stress

      • Received Date: 2015-08-19

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