| Citation: |
Guo Hui, Feng Qian, Tang Xiaoyan, Zhang Yimen, Zhang Yuming. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide[J]. Journal of Semiconductors, 2008, In Press.
Guo H, Feng Q, Tang X Y, Zhang Y M, Zhang Y M. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide[J]. J. Semicond., 2008, 29(4): 637.
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Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide
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Abstract
Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated.TLM (transfer length method) test patterns with polysilicon structure are formed on n-wells created by phosphorus ion (P+) implantation into a Si-faced p-type 4H-SiC epilayer.The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□.The specific contact resistance ρc of n+ polysilicon contact to n-type 4H-SiC as low as 3.82×10-5Ω·cm2 is achieved.The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□.The mechanisms for n+ polysilicon ohmic contact to n-type SiC are discussed. -
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