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Comment on Chen et al. "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition", Electrochimica Acta, 2014

Lara Valentic and Nima E. Gorji

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 Corresponding author: Nima E. Gorji, nima.s.gorji@gmail.com

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Abstract: In a recent article, Chen et al. [Electrochimica Acta, 2014, 130: 279] presented their fabrication and characterization results on a graphene/n-Si solar cell where the Au nanoparticles were inserted in graphene to increase its optical and electrical properties. The higher efficiency of the device was attributed to increased conductivity of graphene after doping with Au nanoparticles. However, the knowledge in the field of Schottky diode solar cells relates this to increased band bending at the junction. Also, to explain the instability behaviour, they concluded that the growth of silicon oxide on the Si surface or oxygen adsorption on the window layer resulted in the device performance increasing initially and decreasing in the end. However, this instability seems to be due to variation in series resistance reduced at the beginning because of slightly lowered Fermi level and increased at the end by the self-compensation by deep in-diffusion of Au nanoparticles into n-Si layer. We also propose that inserting a very thin p-type layer at the junction will enhance the carrier collection and performance of this device.

Key words: Shockley barrier solar cellgrapheneSiAu nanoparticle



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Fig1.  The band diagram drawn by Chen \textit{et al.}[1].

Fig2.  Our proposed band diagram including a very thin p-type layer to enhance the hole transport and indicating the possible pinning Fermi levels.

Fig3.  The suggested alternative band diagram for graphene/n-Si devices.

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    Received: 03 April 2015 Revised: Online: Published: 01 September 2015

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      Lara Valentic, Nima E. Gorji. Comment on Chen et al. 'Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition', Electrochimica Acta, 2014[J]. Journal of Semiconductors, 2015, 36(9): 094012. doi: 10.1088/1674-4926/36/9/094012 L Valentic, N. E. Gorji. Comment on Chen et al. \'Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition\', Electrochimica Acta, 2014[J]. J. Semicond., 2015, 36(9): 094012. doi:  10.1088/1674-4926/36/9/094012.Export: BibTex EndNote
      Citation:
      Lara Valentic, Nima E. Gorji. Comment on Chen et al. "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition", Electrochimica Acta, 2014[J]. Journal of Semiconductors, 2015, 36(9): 094012. doi: 10.1088/1674-4926/36/9/094012

      L Valentic, N. E. Gorji. Comment on Chen et al. \'Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition\', Electrochimica Acta, 2014[J]. J. Semicond., 2015, 36(9): 094012. doi:  10.1088/1674-4926/36/9/094012.
      Export: BibTex EndNote

      Comment on Chen et al. "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition", Electrochimica Acta, 2014

      doi: 10.1088/1674-4926/36/9/094012
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      • Corresponding author: Nima E. Gorji, nima.s.gorji@gmail.com
      • Received Date: 2015-04-03
      • Accepted Date: 2015-04-30
      • Published Date: 2015-01-25

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