Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 12-15

Stillinger-Weber Parameters for InN:Application to InxGa1-xN

Lei Huaping, Jiang Xunya, Yu Guanghui, Chen J, Petit S, Ruterana P and Nouet G

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Abstract: By using a Stillinger-Weber(SW)type empirical potential for InN,the atomic structures of InxGa1-xN alloys and the deformations induced by In-rich clusters in InGaN/GaN quantum wells are presented.The SW parameters are determined by fitting the lattice parameters and elastic constants of InN in wurtzite and zinc-blende structures.The energy of quantum wells containing In-rich clusters is investigated.

Key words: InN SW parametersInGaN quantum well

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Lei Huaping, Jiang Xunya, Yu Guanghui, Chen J, Petit S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN:Application to InxGa1-xN[J]. Journal of Semiconductors, 2007, In Press. Lei H P, Jiang X Y, Yu G H, C J, P S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN:Application to InxGa1-xN[J]. Chin. J. Semicond., 2007, 28(S1): 12.Export: BibTex EndNote
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      Lei Huaping, Jiang Xunya, Yu Guanghui, Chen J, Petit S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN:Application to InxGa1-xN[J]. Journal of Semiconductors, 2007, In Press.

      Lei H P, Jiang X Y, Yu G H, C J, P S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN:Application to InxGa1-xN[J]. Chin. J. Semicond., 2007, 28(S1): 12.
      Export: BibTex EndNote

      Stillinger-Weber Parameters for InN:Application to InxGa1-xN

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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