| Citation: |
Quan Si, Hao Yue, Ma Xiaohua, Zheng Pengtian, Xie Yuanbin. AlGaN/GaN double-channel HEMT[J]. Journal of Semiconductors, 2010, 31(4): 044003. doi: 10.1088/1674-4926/31/4/044003
Quan S, Hao Y, Ma X H, Zheng P T, Xie Y B. AlGaN/GaN double-channel HEMT[J]. J. Semicond., 2010, 31(4): 044003. doi: 10.1088/1674-4926/31/4/044003.
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AlGaN/GaN double-channel HEMT
doi: 10.1088/1674-4926/31/4/044003
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Abstract
The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. -
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