SEMICONDUCTOR TECHNOLOGY

Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process

Chen Shan, Pan Tianhong, Li Zhengming and Jang Shi-Shang

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Abstract: This paper proposes to develop a data-driven via's depth estimator of the deep reactive ion etching process based on statistical identification of key variables. Several feature extraction algorithms are presented to reduce the high-dimensional data and effectively undertake the subsequent virtual metrology (VM) model building process. With the available on-line VM model, the model-based controller is hence readily applicable to improve the quality of a via's depth. Real operational data taken from a industrial manufacturing process are used to verify the effectiveness of the proposed method. The results demonstrate that the proposed method can decrease the MSE from 2.2×10-2 to 9×10-4 and has great potential in improving the existing DRIE process.

Key words: deep reactive-ion etchingvirtual metrologythrough silicon viakey variable analysismodel-based control

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    Received: 20 August 2015 Revised: 24 December 2011 Online: Published: 01 June 2012

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      Chen Shan, Pan Tianhong, Li Zhengming, Jang Shi-Shang. Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process[J]. Journal of Semiconductors, 2012, 33(6): 066002. doi: 10.1088/1674-4926/33/6/066002 Chen S, Pan T H, Li Z M, Jang S S. Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process[J]. J. Semicond., 2012, 33(6): 066002. doi:  10.1088/1674-4926/33/6/066002.Export: BibTex EndNote
      Citation:
      Chen Shan, Pan Tianhong, Li Zhengming, Jang Shi-Shang. Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process[J]. Journal of Semiconductors, 2012, 33(6): 066002. doi: 10.1088/1674-4926/33/6/066002

      Chen S, Pan T H, Li Z M, Jang S S. Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process[J]. J. Semicond., 2012, 33(6): 066002. doi:  10.1088/1674-4926/33/6/066002.
      Export: BibTex EndNote

      Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process

      doi: 10.1088/1674-4926/33/6/066002
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-11-16
      • Revised Date: 2011-12-24
      • Published Date: 2012-05-22

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