| Citation: |
Yu Like, Xu Bo, Wang Zhanguo, Jin Peng, Zhao Chang, Lei Wen, Hu Liangjun, Liu Ning. Formation Process of S-K Quantum Dots[J]. Journal of Semiconductors, 2006, In Press.
Yu L K, Xu B, Wang Z G, Jin P, Zhao C, Lei W, Hu L J, Liu N. Formation Process of S-K Quantum Dots[J]. Chin. J. Semicond., 2006, 27(13): 80.
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Formation Process of S-K Quantum Dots
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Abstract
We grow a single highly inhomogeneous sample of InGaAs quantum dots (QD).The fact that the thickness of the InGaAs layer varies in sample’s different regions leads to an inhomogeneous distribution of QD’s size and density.Such a distribution is well in accordance with the different periods of QD’s formation,which gives us a best view of the whole process of QD’s evolution through a single sample.Atomic force microscopy and photoluminescence spectra show that the size (height and diameter) of the quantum dots becomes narrower and tends to be an equilibrium value when the amount of InGaAs increases.-
Keywords:
- quantum dot,
- AFM,
- PL
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References
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Proportional views
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