| Citation: |
Li Ming, Zhang Haiying, Xu Jingbo, Li Xiao, Liu Liang, Fu Xiaojun. Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT[J]. Journal of Semiconductors, 2008, In Press.
Li M, Zhang H Y, Xu J B, Li X, Liu L, Fu X J. Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT[J]. J. Semicond., 2008, 29(8): 1487.
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Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT
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Abstract
For enhancement-mode InGaP/AlGaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au.Comparison is made after thermal annealing and an optimum annealing process is obtained.Using the structure of Ti/Pt/Au,about a 200mV positive shift of threshold voltage is achieved by thermal annealing at 320℃ for 40min in N2 ambient.Finally,a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage-
Keywords:
- enhancement-mode,
- InGaP/AlGaAs/InGaAs PHEMT,
- anneal,
- threshold voltage
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References
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Proportional views
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