| Citation: |
Yan Guoguo, Sun Guosheng, Wu Hailei, Wang Lei, Zhao Wanshun, Liu Xingfang, Zeng Yiping, Wen Jialiang. Multi-wafer 3C-SiC thin films grown on Si (100) in a vertical HWLPCVD reactor[J]. Journal of Semiconductors, 2011, 32(6): 063001. doi: 10.1088/1674-4926/32/6/063001
Yan G G, Sun G S, Wu H L, Wang L, Zhao W S, Liu X F, Zeng Y P, Wen J L. Multi-wafer 3C-SiC thin films grown on Si (100) in a vertical HWLPCVD reactor[J]. J. Semicond., 2011, 32(6): 063001. doi: 10.1088/1674-4926/32/6/063001.
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Multi-wafer 3C-SiC thin films grown on Si (100) in a vertical HWLPCVD reactor
doi: 10.1088/1674-4926/32/6/063001
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Abstract
We report the latest results of the 3C-SiC layer growth on Si (100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity (σ/mean) of ～3.40% and ～5.37% have been achieved in the 3 × 50 mm configuration. Within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 4% and 4.24%, respectively. -
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