J. Semicond. > 2015, Volume 36 > Issue 8 > 083002, doi: 10.1088/1674-4926/36/8/083002
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SEMICONDUCTOR MATERIALS

Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

P. Jantawongrit1, 4, S. Sanorpim2, H. Yaguchi3, M. Orihara3 and P. Limsuwan1, 4

+ Author Affiliations

 Corresponding author: S. Sanorpim, E-mail: opticslaser@yahoo.com; P. Limsuwan, Email: sakuntam.s@chula.ac.th.com

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Abstract: InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ~ 5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 11$\overline{2}$0 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.

Key words: RF-MBE, TEM, InN, threading dislocation, anti-phase domain, crystal polarity



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Fig. 1.  AFM image showing the surface morphology of InN film on 4H-SiC (0001) substrate with optimum growth conditions. Growth temperature and indium flux were 500 $^\circ C$ and 5.0 $\times$ 10$^{-5}$ Pa,respectively. N$_{2}$ flow rate and RF-plasma power were 1.6 sccm and 400 W,respectively.

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Fig. 2.  HR-XRD profile of InN film grown on 4H-SiC (0001) substrate.

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Fig. 3.  (a) Cross-sectional BF TEM image of InN film grown on 4H-SiC (0001) substrate along the $[\overline{1}100]$ zone axis and (b) corresponding SAD pattern.

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Fig. 4.  Cross-sectional DF TEM images with diffraction vectors. (a) $g =$ $11\overline{2}0$. (b) $g =$ 0002. (c) $g =$ $000\overline{2}$.

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Fig. 5.  Dark field TEM images of InN film grown on 4H-SiC substrate along the $[\bar {1}100]$ zone axis with diffraction vectors. (a) $g=$ 0002. (b) $g=$ 000$\overline{2}$.

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Fig. 6.  Dashed lines represent anti-phase boundaries along [$\overline{1}$100] direction of the hexagonal InN.

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    Received: 19 November 2014 Revised: Online: Published: 01 August 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(8): 083002
      P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara, P. Limsuwan. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE[J]. Journal of Semiconductors, 2015, 36(8): 083002. doi: 10.1088/1674-4926/36/8/083002 P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara, P. Limsuwan. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE[J]. J. Semicond., 2015, 36(8): 083002. doi: 10.1088/1674-4926/36/8/083002.Export: BibTex EndNote
      Citation:
      P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara, P. Limsuwan. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE[J]. Journal of Semiconductors, 2015, 36(8): 083002. doi: 10.1088/1674-4926/36/8/083002

      P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara, P. Limsuwan. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE[J]. J. Semicond., 2015, 36(8): 083002. doi: 10.1088/1674-4926/36/8/083002.
      Export: BibTex EndNote
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      Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

      doi: 10.1088/1674-4926/36/8/083002
      • 1.

        Department of Physics, Faculty of Science, King Mongkut's University of Technology Thonburi, Bangkok 10140, Thailand

      • 2.

        Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand

      • 3.

        Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan

      • 4.

        Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400, Thailand

      Funds:

      Project supported by the Thailand Center of Excellence in Physics (ThEP) and the King Mongkut’s University of Technology Thonburi under The National Research University Project. One of the authors (S. Sanorpim) was supported by the National Research Council of Thailand (NRCT) and the Thai Government Stimulus Package 2 (TKK2555), under the Project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture.

      More Information
      • Corresponding author: E-mail: opticslaser@yahoo.com; Email: sakuntam.s@chula.ac.th.com
      • Received Date: 2014-11-19
      • Accepted Date: 2015-03-20
      • Published Date: 2015-01-25

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