SEMICONDUCTOR TECHNOLOGY

Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers

Zheng Zhongshan, Liu Zhongli, Li Ning, Li Guohua and Zhang Enxia

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Abstract: To harden silicon-on-insulator (SOI) wafers fabricated using separation by implanted oxygen (SIMOX) to total-dose irradiation, the technique of nitrogen implantation into the buried oxide (BOX) layer of SIMOX wafers can be used. However, in this work, it has been found that all the nitrogen-implanted BOX layers reveal greater initial positive charge densities, which increased with increasing nitrogen implantation dose. Also, the results indicate that excessively large nitrogen implantation dose reduced the radiation tolerance of BOX for its high initial positive charge density. The bigger initial positive charge densities can be ascribed to the accumulation of implanted nitrogen near the Si-BOX interface after annealing. On the other hand, in our work, it has also been observed that, unlike nitrogen-implanted BOX, all the fluorine-implanted BOX layers show a negative charge density. To obtain the initial charge densities of the BOX layers, the tested samples were fabricated with a metal-BOX-silicon (MBS) structure based on SIMOX wafers for high-frequency capacitance–voltage (C–V ) analysis.

Key words: buried oxide

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    Received: 18 August 2015 Revised: 27 September 2009 Online: Published: 01 February 2010

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      Zheng Zhongshan, Liu Zhongli, Li Ning, Li Guohua, Zhang Enxia. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers[J]. Journal of Semiconductors, 2010, 31(2): 026001. doi: 10.1088/1674-4926/31/2/026001 Zheng Z S, Liu Z L, Li N, Li G H, Zhang E X. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers[J]. J. Semicond., 2010, 31(2): 026001. doi: 10.1088/1674-4926/31/2/026001.Export: BibTex EndNote
      Citation:
      Zheng Zhongshan, Liu Zhongli, Li Ning, Li Guohua, Zhang Enxia. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers[J]. Journal of Semiconductors, 2010, 31(2): 026001. doi: 10.1088/1674-4926/31/2/026001

      Zheng Z S, Liu Z L, Li N, Li G H, Zhang E X. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers[J]. J. Semicond., 2010, 31(2): 026001. doi: 10.1088/1674-4926/31/2/026001.
      Export: BibTex EndNote

      Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers

      doi: 10.1088/1674-4926/31/2/026001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-08-27
      • Revised Date: 2009-09-27
      • Published Date: 2010-01-27

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