| Citation: |
He Jin, Zhang Jian, Zhang Lining, Ma Chenyue, Chan Mansun. A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs[J]. Journal of Semiconductors, 2009, 30(2): 024001. doi: 10.1088/1674-4926/30/2/024001
He J, Zhang J, Zhang L N, Ma C Y, Chan M S. A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs[J]. J. Semicond., 2009, 30(2): 024001. doi: 10.1088/1674-4926/30/2/024001.
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A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
doi: 10.1088/1674-4926/30/2/024001
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Abstract
A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.-
Keywords:
- non-classical?MOS?transistor
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