SEMICONDUCTOR INTEGRATED CIRCUITS

Design of ternary clocked adiabatic static random access memory

Wang Pengjun and Mei Fengna

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Abstract: Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions.

Key words: multi-valued logic adiabatic ternary SRAM circuit design

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    Received: 20 August 2015 Revised: 29 May 2011 Online: Published: 01 October 2011

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      Wang Pengjun, Mei Fengna. Design of ternary clocked adiabatic static random access memory[J]. Journal of Semiconductors, 2011, 32(10): 105011. doi: 10.1088/1674-4926/32/10/105011 Wang P J, Mei F N. Design of ternary clocked adiabatic static random access memory[J]. J. Semicond., 2011, 32(10): 105011. doi: 10.1088/1674-4926/32/10/105011.Export: BibTex EndNote
      Citation:
      Wang Pengjun, Mei Fengna. Design of ternary clocked adiabatic static random access memory[J]. Journal of Semiconductors, 2011, 32(10): 105011. doi: 10.1088/1674-4926/32/10/105011

      Wang P J, Mei F N. Design of ternary clocked adiabatic static random access memory[J]. J. Semicond., 2011, 32(10): 105011. doi: 10.1088/1674-4926/32/10/105011.
      Export: BibTex EndNote

      Design of ternary clocked adiabatic static random access memory

      doi: 10.1088/1674-4926/32/10/105011
      Funds:

      National Natural Science Foundation of China

      • Received Date: 2015-08-20
      • Accepted Date: 2011-04-05
      • Revised Date: 2011-05-29
      • Published Date: 2011-09-20

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