J. Semicond. > 2015, Volume 36 > Issue 6 > 064010, doi: 10.1088/1674-4926/36/6/064010
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SEMICONDUCTOR DEVICES

Characteristics of HfO2/Hf-based bipolar resistive memories

Jinshun Bi and Zhengsheng Han

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 Corresponding author: Jinshun Bi, Email: bijinshun@ime.ac.cn

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Abstract: Nano-scale Hf/HfO2-based resistive random-access-memory (RRAM) devices were fabricated. The cross-over between top and bottom electrodes of RRAM forms the metal-insulator-metal sandwich structure. The electrical responses of RRAM are studied in detail, including forming process, SET process and RESET process. The correlations between SET voltage and RESET voltage, high resistance state and low resistance state are discussed. The electrical characteristics of RRAM are in a strong relationship with the compliance current in the SET process. The conduction mechanism of nano-scale Hf/HfO2-based RRAM can be explained by the quantum point contact model.

Key words: hafnium dioxide, bipolar, resistive random-access-memory, conductive filament, quantum point contact model



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Fig. 1.  Hf/HfO$_{2}$-based bipolar RRAM. (a) SEM picture of planarized structure. (b) TEM picture of stacked MIM structure.

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Fig. 2.  Typical test sequence for HfO$_{2}$/Hf RRAM.

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Fig. 3.  Typical $I$-$V$ curves for forming step and 1st RESET of RRAM devices.

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Fig. 4.  (Color online) SET/RESET switching cycles after forming step and 1st RESET. Ten cycles are shown with a small variation.

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Fig. 5.  Statistical distributional of (a) forming voltage,(b) SET voltage,and (c) RESET voltage of RRAM devices.

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Fig. 6.  The influence of compliance current (CC) on $I$-$V$ characteristics in Hf/HfO$_{2}$-based bipolar RRAM.

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Fig. 7.  Narrow restriction region energy band diagram. $eV$ is the energy window for electrons passing through (gray region). $e$ is elementary electron charge,$V$ is the applied bias. (a) For HRS,potential barrier is higher than Fermi level $E_{\rm F}$. $\Phi$ is potential barrier. $t_{\rm B}$ is the width of potential barrier. (b) For LRS,potential barrier is lower than energy window.

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Table 1.   The influence of compliance current (CC) on the electrical parameters in Hf/HfO$_{2}$-based bipolar RRAM.

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    Received: 05 December 2014 Revised: Online: Published: 01 June 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(6): 064010
      Jinshun Bi, Zhengsheng Han. Characteristics of HfO2/Hf-based bipolar resistive memories[J]. Journal of Semiconductors, 2015, 36(6): 064010. doi: 10.1088/1674-4926/36/6/064010 J S Bi, Z S Han. Characteristics of HfO2/Hf-based bipolar resistive memories[J]. J. Semicond., 2015, 36(6): 064010. doi: 10.1088/1674-4926/36/6/064010.Export: BibTex EndNote
      Citation:
      Jinshun Bi, Zhengsheng Han. Characteristics of HfO2/Hf-based bipolar resistive memories[J]. Journal of Semiconductors, 2015, 36(6): 064010. doi: 10.1088/1674-4926/36/6/064010

      J S Bi, Z S Han. Characteristics of HfO2/Hf-based bipolar resistive memories[J]. J. Semicond., 2015, 36(6): 064010. doi: 10.1088/1674-4926/36/6/064010.
      Export: BibTex EndNote
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      Characteristics of HfO2/Hf-based bipolar resistive memories

      doi: 10.1088/1674-4926/36/6/064010

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 11179003, 61176095).

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      • Corresponding author: Email: bijinshun@ime.ac.cn
      • Received Date: 2014-12-05
      • Accepted Date: 2015-01-07
      • Published Date: 2015-01-25

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