Chin. J. Semicond. > 2005, Volume 26 > Issue 11 > 2069-2073

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Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD

Shen Wenjuan, Wang Jun, Duan Yao, Wang Qiyuan and Zeng Yiping

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Abstract: High quality ZnO films are successfully grown on Si(100) substrates by metal-organic chemical vapor deposition at 300℃.The effects of the thickness of the ZnO films on crystal structure,surface morphology,and optical properties are investigated using X-ray diffraction,scanning probe microscopy,and photoluminescence spectra,respectively.It is shown that the ZnO films grown on Si substrates have a highly-preferential C-axis orientation,but it is difficult to obtain the better structural and optical properties of the ZnO films with the increasing of thickness.It is maybe due to that the grain size and the growth model are changed in the growth process.

Key words: metal-organic chemical vapor depositionX-ray diffractionzinc compoundphotoluminescence spectrum

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2005

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      Shen Wenjuan, Wang Jun, Duan Yao, Wang Qiyuan, Zeng Yiping. Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD[J]. Journal of Semiconductors, 2005, In Press. Shen W J, Wang J, Duan Y, Wang Q Y, Zeng Y P. Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD[J]. Chin. J. Semicond., 2005, 26(11): 2069.Export: BibTex EndNote
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      Shen Wenjuan, Wang Jun, Duan Yao, Wang Qiyuan, Zeng Yiping. Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD[J]. Journal of Semiconductors, 2005, In Press.

      Shen W J, Wang J, Duan Y, Wang Q Y, Zeng Y P. Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD[J]. Chin. J. Semicond., 2005, 26(11): 2069.
      Export: BibTex EndNote

      Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD

      • Received Date: 2015-08-19

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