| Citation: |
Jin Boshi, Li Lewei, Wu Qun, Yang Guohui, Zhang Kuang. A highly linear fully integrated CMOS power amplifier with an analog predistortion technique[J]. Journal of Semiconductors, 2011, 32(5): 054006. doi: 10.1088/1674-4926/32/5/054006
Jin B S, Li L W, Wu Q, Yang G H, Zhang K. A highly linear fully integrated CMOS power amplifier with an analog predistortion technique[J]. J. Semicond., 2011, 32(5): 054006. doi: 10.1088/1674-4926/32/5/054006.
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A highly linear fully integrated CMOS power amplifier with an analog predistortion technique
doi: 10.1088/1674-4926/32/5/054006
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Abstract
A transformer-based CMOS power amplifier (PA) is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter. The third harmonic of the power stage and driver stage can be cancelled out in a specific power region. The two-stage PA fabricated in a standard 0.18-μm CMOS process delivers 27.5 dBm with 27% PAE at the 1-dB compression point (P1dB) and offers 21 dB gain. The PA achieves 5.5 % EVM and meets the spectrum mask at 20.5 dBm average power. Another conventional PA with a zero-cross-point of gm3 bias is also fabricated and compared to prove its good linearity and efficiency.-
Keywords:
- linear,
- CMOS,
- power amplifier,
- m-WiMAX,
- transformer,
- analog predistortion
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References
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