Transport Current Model of SiGe HBT

Hu Huiyong; Zhang Heming; Dai Xianying; Xuan Rongxi; Cui Xiaoying; Wang Qing; Jiang Tao

Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

Article Navigation > Journal of Semiconductors > 2006 > 27(6): 1059-1063

Hu Huiyong, Zhang Heming, Dai Xianying, Xuan Rongxi, Cui Xiaoying, Wang Qing, Jiang Tao. Transport Current Model of SiGe HBT[J]. Journal of Semiconductors, 2006, In Press. Hu H Y, Zhang H M, Dai X Y, Xuan R X, Cui X Y, Wang Q, Jiang T. Transport Current Model of SiGe HBT[J]. Chin. J. Semicond., 2006, 27(6): 1059.Export: BibTex EndNote

Citation:

Hu Huiyong, Zhang Heming, Dai Xianying, Xuan Rongxi, Cui Xiaoying, Wang Qing, Jiang Tao. Transport Current Model of SiGe HBT[J]. Journal of Semiconductors, 2006, In Press.

Hu H Y, Zhang H M, Dai X Y, Xuan R X, Cui X Y, Wang Q, Jiang T. Transport Current Model of SiGe HBT[J]. Chin. J. Semicond., 2006, 27(6): 1059.

Export: BibTex EndNote

Citation:

Hu Huiyong, Zhang Heming, Dai Xianying, Xuan Rongxi, Cui Xiaoying, Wang Qing, Jiang Tao. Transport Current Model of SiGe HBT[J]. Journal of Semiconductors, 2006, In Press.

Hu H Y, Zhang H M, Dai X Y, Xuan R X, Cui X Y, Wang Q, Jiang T. Transport Current Model of SiGe HBT[J]. Chin. J. Semicond., 2006, 27(6): 1059.

Export: BibTex EndNote

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Transport Current Model of SiGe HBT

Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

Received Date: 2015-08-20

Abstract

Abstract

Based on the large signal equivalent circuit model of SiGe heterojunction bipolar transistor(HBT),a SiGe HBT transport current model is developed that takes the influence on carrier transport of the energy band discontinuity of the emitter into account.The model features the definite physical meaning and simple topology.The simulated results agree well with the results theoretically analyzed in other literature.The DC characteristic simulated by PSPICE,into which the model is embedded,is in accord with that in other literatures.
- SiGe,
- heterojunction bipolar transistor,
- transport current,
- PSPICE

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