Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 194-197

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具有降场电极U形漂移区SOI-LDMOS的耐压特性

罗卢杨 , 方健 , 罗萍 and 李肇基

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Key words: SOI, LDMOS, RESURF

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    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

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      • Received Date: 2015-08-20

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