Fig. 1.
Variation of mean square noise voltage per unit band width as a function of frequency for different values of $x_{\rm g}/W$ depicting the effect of the tunneling current.
DownLoad:
| Citation: |
Deepak K. Karan, Pranati Panda, G. N. Dash. Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode[J]. Journal of Semiconductors, 2013, 34(1): 014001. doi: 10.1088/1674-4926/34/1/014001
D K Karan, P Panda, G N Dash. Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode[J]. J. Semicond., 2013, 34(1): 014001. doi: 10.1088/1674-4926/34/1/014001.
Export: BibTex EndNote
|
Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode
doi: 10.1088/1674-4926/34/1/014001
More Information-
Abstract
Noise characteristics of a Read Avalanche diode are analyzed by incorporating the tunneling mechanism of the electron into the avalanche mechanism. Analytical expressions are presented for the mean square noise voltage and noise measure in MITATT (mixed tunneling and avalanche transit time) mode operation. A wide band gap semiconductor (4H-SiC) based MITATT diode is considered to study the effect of tunneling on the noise characteristics and negative conductance. While exhibiting enough potential for 4H-SiC to be used as a terahertz source of power in the MITATT mode, our results record a noise measure of 35.18 dB at a frequency of 1.5 THz. -
References
[1] Zhang C X, Zhang E X, Fleetwood D M, et al. effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices. IEEE Trans Nucl Sci, 2011, 58:2925 doi: 10.1109/TNS.2011.2168424[2] Imhoff E A, Kub F J, Hobart K D, et al. High-performance smoothly tapered junction termination extensions for high-voltage 4H-SiC devices. IEEE Trans Electron Devices, 2011, 58:3395 doi: 10.1109/TED.2011.2160948[3] Zhang H, Tolbert L M, Ozpineci B. Impact of SiC devices on hybrid electric and plug-in hybrid electric vehicles. IEEE Trans Industry Applications, 2011, 47(2):912 doi: 10.1109/TIA.2010.2102734[4] Panda A K, Rao V M. Modeling and comparative study on the high frequency and noise characteristics of different polytypes of SiC-based IMPATTs. IEEE Asia Pacific Microwave Conference, 2009: 1569[5] Mukherjee M. Effects of punch-through on terahertz frequency characteristics of 4H-SiC based p++ p n n++ IMPATT devices. IEEE 4th International Conference on Computers and Devices for Communication, 2009:1[6] Tripathy P R, Mishra R K, Pati S P. MM-wave characteristics of SiC-based IMPATT oscillators. IEEE Applied Electromagnetics Conference, 2009: 1[7] Pattanaik S R, Dash G N, Mishra J K. Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz. Semicond Sci Technol, 2005, 20:299 doi: 10.1088/0268-1242/20/3/008[8] Gummel H K, Blue J L. A small signal theory of avalanche noise in IMPATTs. IEEE Trans Electron Devices, 1967, ED-14:569[9] Hines M E. Noise theory for the Read type avalanche diode. IEEE Trans Electron Devices, 1966, ED-13:158[10] Dash G N, Mishra J K, Panda A K. Noise in mixed tunneling avalanche transit time (MITATT) diodes. Solid State Electron, 1996, 39(10):1473 doi: 10.1016/0038-1101(96)00054-8[11] Dash G N, Mishra J K, Nayak S K. Tunneling assisted noise control in InAs/InAs0.88Sb0.12 Read Avalanche diode. IETE Tech Review, 1999, 16(2):243 doi: 10.1080/02564602.1999.11416836[12] Elta M E, Haddad G I. Mixed tunneling and Avalanche mechanisms in p-n junction and their effects on microwave transit time devices. IEEE Trans Electron Devices, 1978, ED-25:694[13] -
Proportional views
