J. Semicond. > 2008, Volume 29 > Issue 11 > 2101-2105

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A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe

Song Jiayou, Wang Zhigong and Peng Yanjun

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Abstract: A 2GHz power amplifier realized in IBM 5PAe 0.35μm SiGe BiCMOS technology is reported.This amplifier was implemented in a two-stage single-ended structure.All components except choking inductors were integrated on-chip.Full-frequency stability was achieved using serial resistors between the bases of the transistors and matching inductors.The off-chip test proved the stability under all the supplied voltages.At VC=3.5V,VB=6V,the small signal gain was 20.8dB,the input and output reflectance was less than -17 and -16dB,respectively,and the Pout-2dB was about 24dBm.At the output power of 25.1dBm,the PAE was about 21.5%,and the second and third harmonics were less than -45 and -52dBc,respectively.This insures the linearity of the circuits.

Key words: power amplifiersilicon germaniumBiCMOSheterojunction bipolar transistor

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    Received: 18 August 2015 Revised: 11 July 2008 Online: Published: 01 November 2008

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      Song Jiayou, Wang Zhigong, Peng Yanjun. A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe[J]. Journal of Semiconductors, 2008, In Press. Song J Y, Wang Z G, Peng Y J. A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe[J]. J. Semicond., 2008, 29(11): 2101.Export: BibTex EndNote
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      Song Jiayou, Wang Zhigong, Peng Yanjun. A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe[J]. Journal of Semiconductors, 2008, In Press.

      Song J Y, Wang Z G, Peng Y J. A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe[J]. J. Semicond., 2008, 29(11): 2101.
      Export: BibTex EndNote

      A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe

      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-04
      • Revised Date: 2008-07-11
      • Published Date: 2008-11-11

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