Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 200-203

High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature

Gao Hongling, Wang Baoqiang, Zhu Zhanping, Li Chengji, Duan Ruifei and Zeng Yiping

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Abstract: High resistivity step-graded InAlAs/GaAs metamorphic buffer has been achieved on(001)SI.GaAs substrate by MBE in low temperature.The resistivity is 2.6×10^4Ω·cm in room temperature,when the growth temperature is 340℃. Surface morphology is observed by atomic force microscopy with RMS of 1.79nm.Furthermore,the ω-2θ scan using triple-axis X·ray diffraction shows that the sample has better crystalline quality.The electron transport properties of the buffer layers were investigated through variable temperature Hall measurements for the first time.The high resistivity mechanism was investigated by thermally stimulated current (TSC). The carrier concentrations and Hall mobilities of the InAlAs/InGaAs/GaAs MM-HEMT structure on low temperature step graded InAIAs metamorphic buffer layers grown in optimized conditions are high quality.

Key words: MBElow temperature buffer layers

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Gao Hongling, Wang Baoqiang, Zhu Zhanping, Li Chengji, Duan Ruifei, Zeng Yiping. High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature[J]. Journal of Semiconductors, 2007, In Press. Gao H L, Wang B Q, Zhu Z P, Li C J, Duan R F, Zeng Y P. High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature[J]. Chin. J. Semicond., 2007, 28(S1): 200.Export: BibTex EndNote
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      Gao Hongling, Wang Baoqiang, Zhu Zhanping, Li Chengji, Duan Ruifei, Zeng Yiping. High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature[J]. Journal of Semiconductors, 2007, In Press.

      Gao H L, Wang B Q, Zhu Z P, Li C J, Duan R F, Zeng Y P. High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature[J]. Chin. J. Semicond., 2007, 28(S1): 200.
      Export: BibTex EndNote

      High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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