Chin. J. Semicond. > 2003, Volume 24 > Issue 7 > 697-701
|

CONTENTS

离子注入4H-SiC MESFET器件的夹断电压(英文)

王守国 , 张义门 and 张玉明

+ Author Affiliations

PDF

Key words: 碳化硅, 离子注入, MESFET, 夹断电压

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2216 Times PDF downloads: 1322 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 July 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(7): 697-701
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return