Fig. 1.
Defect distribution across the CdTe ultrathin film after ion implantation with $G_0$ $=$ 5.5 $\times$ 10$^{20}$ cm$^{-3}$ .
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Nima E. Gorji. Modeling the defect distribution and degradation of CdTe ultrathin films[J]. Journal of Semiconductors, 2014, 35(12): 122001. doi: 10.1088/1674-4926/35/12/122001
N. E. Gorji. Modeling the defect distribution and degradation of CdTe ultrathin films[J]. J. Semicond., 2014, 35(12): 122001. doi: 10.1088/1674-4926/35/12/122001.
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Modeling the defect distribution and degradation of CdTe ultrathin films
doi: 10.1088/1674-4926/35/12/122001
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Abstract
The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters, because of the defect induced through ion implantation, was considered. The degradation is accelerated if the ion implanted defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer (CdS/CdTe). The ultrathin device is under exposure of a fast degradation if the defect concentration is high at the junction. Since the front and back contacts of the device are close and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled. The modeling results presented here are in agreement with the few available experimental reports in the literature on the degradation and defect configuration of the ultrathin CdTe films.-
Keywords:
- defect distribution,
- ultrathin films,
- CdTe,
- degradation,
- ion implantation
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References
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