| Citation: |
Bi Jinshun, Wu Junfeng, Hai Chaohe. Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET[J]. Journal of Semiconductors, 2006, In Press.
Bi J S, Wu J F, Hai C H. Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET[J]. Chin. J. Semicond., 2006, 27(1): 35.
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Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET
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Abstract
A novel planar DGDT FDSOI nMOSFET is presented,and the operation mechanism is discussed.The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici.The back-gate n-well is formed by implantation of phosphorus at a dosage of 3×1013cm-2 and an energy of 250keV and connected directly to a front-gate n+ polysilicon.This method is completely compatible with the conventional bulk silicon process.Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted (PD) SOI nMOSFET--that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET.-
Keywords:
- double-gate structure,
- dynamic threshold,
- FDSOI,
- nMOSFET
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References
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Proportional views
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