| Citation: |
Tu Jielei, Wang Liangxing, Zhang Zhongwei, Chi Weiying, Peng Dongsheng, Chen Chaoqi. Analysis on Abnormal I-V Curves of GaAs/Ge Solar Cells[J]. Journal of Semiconductors, 2005, In Press.
Tu J L, Wang L X, Zhang Z W, Chi W Y, Peng D S, Chen C Q. Analysis on Abnormal I-V Curves of GaAs/Ge Solar Cells[J]. Chin. J. Semicond., 2005, 26(13): 192.
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Analysis on Abnormal I-V Curves of GaAs/Ge Solar Cells
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Abstract
The main reasons why I-V curves are abnormal in developing GaAs/Ge solar cells are discussed for each diffusion in GaAs/Ge interface,which will form additional junction or potential.And theoretical calculating simulations agreeing with experi-ments re-comfirm above ideas.As the result,GaAs/Ge solar cells with 2095% (AM0,25℃, 2cm×4cm) are successfully obtained by increasing growth temperature and optimising condition of forming nucleus. -
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