MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE

Bi Zhen; Zhang Jingwen; Bian Xuming; Wang Dong; Zhang Xin'+C143an; Hou Xun

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Article Navigation > Journal of Semiconductors > 2007 > 28(8): 1242-1247

Bi Zhen, Zhang Jingwen, Bian Xuming, Wang Dong, Zhang Xin'+C143an, Hou Xun. MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE[J]. Journal of Semiconductors, 2007, In Press. Bi Z, Zhang J W, Bian X M, Wang D, Zhang X, Hou X. MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE[J]. Chin. J. Semicond., 2007, 28(8): 1242.Export: BibTex EndNote

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Bi Zhen, Zhang Jingwen, Bian Xuming, Wang Dong, Zhang Xin'+C143an, Hou Xun. MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE[J]. Journal of Semiconductors, 2007, In Press.

Bi Z, Zhang J W, Bian X M, Wang D, Zhang X, Hou X. MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE[J]. Chin. J. Semicond., 2007, 28(8): 1242.

Export: BibTex EndNote

Citation:

Bi Zhen, Zhang Jingwen, Bian Xuming, Wang Dong, Zhang Xin'+C143an, Hou Xun. MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE[J]. Journal of Semiconductors, 2007, In Press.

Bi Z, Zhang J W, Bian X M, Wang D, Zhang X, Hou X. MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE[J]. Chin. J. Semicond., 2007, 28(8): 1242.

Export: BibTex EndNote

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MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE

School of Science,Xi'an Jiaotong University,Xi'an 710049,China
Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
School of Science,Xi'an Jiaotong University,Xi'an 710049,China
Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China
School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China

Received Date: 2015-08-18
Accepted Date: 2006-11-28
Revised Date: 2007-03-24
Published Date: 2007-08-08

Abstract

Abstract

Mg0.2Zn0.8O films were deposited on the c-plane of sapphire by LMBE with two different structures.The films were all annealed in air at 900℃ for 1h.Then interdigital Al electrodes were evaporated on the films using the standard lift-off technique.A Mg0.2Zn0.8O ultraviolet photodetector was obtained,with a fast rise time of 14.3ns and fall time of 6.5μs.
- Mg0.2Zn0.8O film,
- ultraviolet photodetector,
- response time

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