Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 478-481

Proton Irradiation on the Performance of the Superluminescent

Zhao Miao and Sun Mengxiang

+ Author Affiliations

PDF

Abstract: The superluminescent was proton irradiated,the energy is 350keV and 1MeV,and the fluence is 1×10^12 and 1× 10^13p/cm2,respectively.the optical and electrical characters after irradiation are studied.when the SLD is irradiated in the similar proton fluence,the degradation of optical power with 350keV is higher than those with 1MeV.The resist irradiation in QWSLD is more excellent than the DHSLD.The ions range in the material is simulated,and the irradiation damage mechanism is discussed.

Key words: superluminescent(SLD) irradiation degradationoptical power

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 1691 Times PDF downloads: 432 Times Cited by: 0 Times

    History

    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Miao, Sun Mengxiang. Proton Irradiation on the Performance of the Superluminescent[J]. Journal of Semiconductors, 2007, In Press. Zhao M, Sun M X. Proton Irradiation on the Performance of the Superluminescent[J]. Chin. J. Semicond., 2007, 28(S1): 478.Export: BibTex EndNote
      Citation:
      Zhao Miao, Sun Mengxiang. Proton Irradiation on the Performance of the Superluminescent[J]. Journal of Semiconductors, 2007, In Press.

      Zhao M, Sun M X. Proton Irradiation on the Performance of the Superluminescent[J]. Chin. J. Semicond., 2007, 28(S1): 478.
      Export: BibTex EndNote

      Proton Irradiation on the Performance of the Superluminescent

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return