Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 263-266

Growth of AIN Crystals by PVT

Wu Honglei, Zheng Ruisheng and Sun Xiuming

+ Author Affiliations

PDF

Abstract: Growth conditions for self-nucleation and subsequent growth of AIN crystals by PVT are presented.The crucible module with a graphite ring is introduced to avoid adhesion of the tungsten crucible and its lid at high temperatures.With in- creasing growth temperature,the natural habit of AIN crystals changes from needle-like to prismatic. When growth tempera· ture is above 1950"C,bulk AlN crystals can be grown.Measurement of supersaturation is found to impact the crystals’size and quality.Now high quality and hexagonal prism AIN single crystals with the diameter of lmm are grown,and the largest single crystal size is 2mm in diameter.

Key words: hysical vapor transportaluminum nitride crystalgrowth temperature

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 1787 Times PDF downloads: 605 Times Cited by: 0 Times

    History

    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wu Honglei, Zheng Ruisheng, Sun Xiuming. Growth of AIN Crystals by PVT[J]. Journal of Semiconductors, 2007, In Press. Wu H L, Zheng R S, Sun X M. Growth of AIN Crystals by PVT[J]. Chin. J. Semicond., 2007, 28(S1): 263.Export: BibTex EndNote
      Citation:
      Wu Honglei, Zheng Ruisheng, Sun Xiuming. Growth of AIN Crystals by PVT[J]. Journal of Semiconductors, 2007, In Press.

      Wu H L, Zheng R S, Sun X M. Growth of AIN Crystals by PVT[J]. Chin. J. Semicond., 2007, 28(S1): 263.
      Export: BibTex EndNote

      Growth of AIN Crystals by PVT

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return