SEMICONDUCTOR DEVICES

Modelling of nanostructured TiO2-based memristors

S. S. Shinde and T. D. Dongle

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 Corresponding author: S. S. Shinde, E-mail: physics.sambhaji2006@gmail.com

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Abstract: The fourth fundamental circuit element memristor completes the missing link between charge and magnetic flux. It consists of the function of the resistor as well as memory in nonlinear fashion. The property of the memristor depends on the magnitude and direction of applied potential. This unique property makes it the primitive building block for many applications such as resistive memories, soft computing, neuromorphic systems and chaotic circuits etc. In this paper we report TiO2-based nanostructured memristor modelling. The present memristor model is constructed in MATLAB environment with consideration of the linear drift model of memristor. The result obtained from the linear drift model is well matched with earlier reported results by other research groups.

Key words: memristorlinear drift modelTiO2



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Fig. 1.  Relationship between four fundamental circuit elements.

Fig. 2.  (a) Structure of memristor reported by HP Laboratory and (b) its equivalent electrical model.

Fig. 3.  Simulative plot of flux $v/s$ charge at $\omega$ $=$ 2 rad/s.

Fig. 4.  Simulative plot of current $v/s$ voltage at $\omega$ $=$ 2 rad/s.

Fig. 5.  Simulative plot of relationship between current and voltage versus time.

Fig. 6.  Simulative plot of time versus memristance.

Fig. 7.  Simulative plot of time versus width.

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    Received: 11 September 2014 Revised: Online: Published: 01 March 2015

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      S. S. Shinde, T. D. Dongle. Modelling of nanostructured TiO2-based memristors[J]. Journal of Semiconductors, 2015, 36(3): 034001. doi: 10.1088/1674-4926/36/3/034001 S. S. Shinde, T. D. Dongle. Modelling of nanostructured TiO2-based memristors[J]. J. Semicond., 2015, 36(3): 034001. doi: 10.1088/1674-4926/36/3/034001.Export: BibTex EndNote
      Citation:
      S. S. Shinde, T. D. Dongle. Modelling of nanostructured TiO2-based memristors[J]. Journal of Semiconductors, 2015, 36(3): 034001. doi: 10.1088/1674-4926/36/3/034001

      S. S. Shinde, T. D. Dongle. Modelling of nanostructured TiO2-based memristors[J]. J. Semicond., 2015, 36(3): 034001. doi: 10.1088/1674-4926/36/3/034001.
      Export: BibTex EndNote

      Modelling of nanostructured TiO2-based memristors

      doi: 10.1088/1674-4926/36/3/034001
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      • Corresponding author: E-mail: physics.sambhaji2006@gmail.com
      • Received Date: 2014-09-11
      • Published Date: 2015-01-25

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