Fabrication of ZnO Thin-Film Transistors by L-MBE

Zhang Xin’an; Zhang Jingwen; Yang Xiaodong; Lou Hui; Liu Zhenling; Zhang Weifeng

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Article Navigation > Journal of Semiconductors > 2006 > 27(6): 1051-1054

Zhang Xin’an, Zhang Jingwen, Yang Xiaodong, Lou Hui, Liu Zhenling, Zhang Weifeng. Fabrication of ZnO Thin-Film Transistors by L-MBE[J]. Journal of Semiconductors, 2006, In Press. Zhang X, Zhang J W, Yang X D, Lou H, Liu Z L, Zhang W F. Fabrication of ZnO Thin-Film Transistors by L-MBE[J]. Chin. J. Semicond., 2006, 27(6): 1051.Export: BibTex EndNote

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Zhang Xin’an, Zhang Jingwen, Yang Xiaodong, Lou Hui, Liu Zhenling, Zhang Weifeng. Fabrication of ZnO Thin-Film Transistors by L-MBE[J]. Journal of Semiconductors, 2006, In Press.

Zhang X, Zhang J W, Yang X D, Lou H, Liu Z L, Zhang W F. Fabrication of ZnO Thin-Film Transistors by L-MBE[J]. Chin. J. Semicond., 2006, 27(6): 1051.

Export: BibTex EndNote

Citation:

Zhang Xin’an, Zhang Jingwen, Yang Xiaodong, Lou Hui, Liu Zhenling, Zhang Weifeng. Fabrication of ZnO Thin-Film Transistors by L-MBE[J]. Journal of Semiconductors, 2006, In Press.

Zhang X, Zhang J W, Yang X D, Lou H, Liu Z L, Zhang W F. Fabrication of ZnO Thin-Film Transistors by L-MBE[J]. Chin. J. Semicond., 2006, 27(6): 1051.

Export: BibTex EndNote

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Fabrication of ZnO Thin-Film Transistors by L-MBE

School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
Key Laboratory of Photonics Technology for Information of Shanxi Province,Xi’an Jiaotong University,Xi’an 710049,China
Key Laboratory of Photonics Technology for Information of Shanxi Province,Xi’an Jiaotong University,Xi’an 710049,China
Key Laboratory of Photonics Technology for Information of Shanxi Province,Xi’an Jiaotong University,Xi’an 710049,China
School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
Key Laboratory of Photonics Technology for Information of Shanxi Province,Xi’an Jiaotong University,Xi’an 710049,China
School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China
Key Laboratory of Photonics Technology for Information of Shanxi Province,Xi’an Jiaotong University,Xi’an 710049,China

Received Date: 2015-08-20

Abstract

Abstract

High quality ZnO films are deposited on SiNx/Si substrate by laser molecular beam epitaxy(L-MBE).XRD and AFM are used to investigate the crystallite and surface of the films, respectively.The results show that the films are homogeneous and crack-free with highly preferred c orientation.We fabricate thin film transistors with ZnO as an active channel layer that works well in the n-channel enhancement mode and have a threshold voltage of 17.5V and a mobility rate as high as 1.05cm2/(V·s).
- L-MBE,
- ZnO thin films,
- thin film transistor

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