Fig. 1.
Circuit diagram of proposed single ended active inductor (with biasing arrangement) with aspect ratios ($W/L$ ) in $\mu $ m for 0.18 $\mu $ m and 45 nm CMOS technology as given above.
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J. Manjula, S. Malarvizhi. Performance analysis of a low power low noise tunable band pass filter for multiband RF front end[J]. Journal of Semiconductors, 2014, 35(3): 035001. doi: 10.1088/1674-4926/35/3/035001
J. Manjula, S. Malarvizhi. Performance analysis of a low power low noise tunable band pass filter for multiband RF front end[J]. J. Semicond., 2014, 35(3): 035001. doi: 10.1088/1674-4926/35/3/035001.
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Performance analysis of a low power low noise tunable band pass filter for multiband RF front end
doi: 10.1088/1674-4926/35/3/035001
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Abstract
This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented. -
References
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