| Citation: |
Chong Feng, Wang Jun, Xiong Cong, Wang Cuiluan, Han Lin, Wu Peng, Wang Guan, Ma Xiaoyu. An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser[J]. Journal of Semiconductors, 2009, 30(6): 064005. doi: 10.1088/1674-4926/30/6/064005
Chong F, Wang J, Xiong C, Wang C L, Han L, Wu P, Wang G, Ma X Y. An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser[J]. J. Semicond., 2009, 30(6): 064005. doi: 10.1088/1674-4926/30/6/064005.
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An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser
doi: 10.1088/1674-4926/30/6/064005
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Abstract
A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs0.9P0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power. The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.-
Keywords:
- asymmetric broad waveguide
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