SEMICONDUCTOR INTEGRATED CIRCUITS

A low power CMOS VCO using inductive-biasing with high performance FoM

Weihao Liu and Lu Huang

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 Corresponding author: Huang Lu,Email:luhuang@ustc.edu.cn

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Abstract: A novel voltage-controlled oscillator (VCO) topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using time-varying phase noise theory derives closed-form symbolic formulas for the 1/f2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 μm CMOS technology. Working under a 0.3 V supply voltage with 1.2 mW power consumption, the measured phase noise of the VCO is -119.4 dBc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an FoM of 192.5 dBc/Hz.

Key words: low powerinductive-biasingfeedback pathphase noisevoltage controlled oscillators (VCO)



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Fig. 1.  Schematic of the VCO with the feedback path

Fig. 2.  Schematic of the proposed VCO.

Fig. 3.  Equivalent half-circuit of the tank in the proposed VCO.

Fig. 4.  Simulated frequency and phase noise versus voltage gain.

Fig. 5.  (Color online) Voltage waveforms in the proposed oscillator.

Fig. 6.  Chip micrograph of the proposed VCO with ESD-ring.

Fig. 7.  Measured central output spectrum of proposed VCO.

Fig. 8.  Measured phase noise of proposed VCO at 0.3V supply voltage. Figure

Fig. 9.  Measured tuning range and related phase noise. oscillation frequency.

.  Simulated (dash line) and Measured (solid line) frequency and phase noise versus the supply voltage.

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Table 1.   Performance summary of low consumption VCOs.

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    Received: 05 August 2015 Revised: Online: Published: 01 April 2016

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      Weihao Liu, Lu Huang. A low power CMOS VCO using inductive-biasing with high performance FoM[J]. Journal of Semiconductors, 2016, 37(4): 045001. doi: 10.1088/1674-4926/37/4/045001 W H Liu, L Huang. A low power CMOS VCO using inductive-biasing with high performance FoM[J]. J. Semicond., 2016, 37(4): 045001. doi: 10.1088/1674-4926/37/4/045001.Export: BibTex EndNote
      Citation:
      Weihao Liu, Lu Huang. A low power CMOS VCO using inductive-biasing with high performance FoM[J]. Journal of Semiconductors, 2016, 37(4): 045001. doi: 10.1088/1674-4926/37/4/045001

      W H Liu, L Huang. A low power CMOS VCO using inductive-biasing with high performance FoM[J]. J. Semicond., 2016, 37(4): 045001. doi: 10.1088/1674-4926/37/4/045001.
      Export: BibTex EndNote

      A low power CMOS VCO using inductive-biasing with high performance FoM

      doi: 10.1088/1674-4926/37/4/045001
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      Project supported by the National Science and Technology Major Project of China (No. 2011ZX03004-002-01).

      More Information
      • Corresponding author: Huang Lu,Email:luhuang@ustc.edu.cn
      • Received Date: 2015-08-05
      • Accepted Date: 2015-09-11
      • Published Date: 2016-01-25

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