| Citation: |
Zhong Min, Zhang Kailiang, Song Zhitang, Feng Songlin. Research on CMP Slurry for Fine Polishing of Si Substrate[J]. Journal of Semiconductors, 2006, In Press.
Zhong M, Zhang K L, Song Z T, Feng S L. Research on CMP Slurry for Fine Polishing of Si Substrate[J]. Chin. J. Semicond., 2006, 27(13): 400.
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Research on CMP Slurry for Fine Polishing of Si Substrate
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Abstract
Chemical mechanical polishing is one of the most important processes in IC fabrication.In order to increase the polishing rate and get smooth surface, a series of polishing experiments about the effect of slurry components were done by using self-made colloidal silica nanometer slurry with large particle abrasives,and its thickness and surface were characterized by atomic profiler、AFM and thickness tester.Results show that after the recipes of slurry including the pH value,the concentration of abrasive and other additives were optimized,higher removal rate and smoother surface were achieved.The removal rate was 697nm/min,and the RMS of surface roughness was 0.4516nm.In sum,higher removal rate and ultra-fine surface were achieved simultaneously. -
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