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Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS

Sun Weifeng, Yi Yangbo, Lu Shengli and Shi Longxing

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Abstract: A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed.According to the proposed model,to obtain good performance,the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded.The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58.8%,and the specific on-resistance is reduced by 87.4% compared with conventional LDMOS.These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.

Key words: breakdown voltagespecific on-resistancepiecewise linearly graded doping drift region

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    Received: 18 August 2015 Revised: 02 March 2006 Online: Published: 01 June 2006

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      Sun Weifeng, Yi Yangbo, Lu Shengli, Shi Longxing. Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS[J]. Journal of Semiconductors, 2006, In Press. Sun W F, Yi Y B, Lu S L, Shi L X. Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS[J]. Chin. J. Semicond., 2006, 27(6): 976.Export: BibTex EndNote
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      Sun Weifeng, Yi Yangbo, Lu Shengli, Shi Longxing. Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS[J]. Journal of Semiconductors, 2006, In Press.

      Sun W F, Yi Y B, Lu S L, Shi L X. Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS[J]. Chin. J. Semicond., 2006, 27(6): 976.
      Export: BibTex EndNote

      Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS

      • Received Date: 2015-08-18
      • Accepted Date: 2006-01-18
      • Revised Date: 2006-03-02
      • Published Date: 2006-10-12

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