| Citation: |
Zhao Youwen, Dong Zhiyuan, Wei Xuecheng, Duan Manlong, Li Jinmin. Study of Sublimation Crystal Growth of Bulk AlN[J]. Journal of Semiconductors, 2006, In Press.
Zhao Y W, Dong Z Y, Wei X C, Duan M L, Li J M. Study of Sublimation Crystal Growth of Bulk AlN[J]. Chin. J. Semicond., 2006, 27(7): 1241.
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Study of Sublimation Crystal Growth of Bulk AlN
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Abstract
Experimental results of bulk AlN crystal growth by physical vapor transport (PVT) and its characterization are presented.A growth temperature of 1900℃ is reached by RF coil heating of the AlN source material contained in a BN crucible.Thin needle crystals and dense polycrystals are obtained in this case.It is difficult to grow large AlN crystals using a BN crucible.A growth temperature of 2200℃ is reached by RF induction heating of the source material contained with a tungsten crucible.AlN crystals in a diameter of 22mm are grown on AlN ceramic plate and 6H-SiC wafer,respectively,of which the largest grain size is 10mm in length and 5mm in diameter.The structure and component of several AlN samples are analyzed using X-ray powder diffraction.The chemical thermodynamic process and growth phenomena related to the AlN PVT growth are discussed.-
Keywords:
- AlN,
- crystal,
- sublimation
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References
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Proportional views
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