J. Semicond. > 2008, Volume 29 > Issue 9 > 1740-1744

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An Improved High Fan-in Domino Circuit for High Performance Microprocessors

Feng Chaochao, Chen Xun, Yi Xiaofei and Zhang Minxuan

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Abstract: An improved high fan-in domino circuit is proposed.The nMOS pull-down network of the circuit is divided into several blocks to reduce the capacitance of the dynamic node and each block only needs a small keeper transistor to maintain the noise margin.Because we omit the footer transistor,the circuit has better performance than the standard domino circuit.A 64-input OR-gate implemented with the structure is simulated using HSPICE under typical conditions of 0.13μm CMOS technology.The average delay of the circuit is 63.9ps,the average power dissipation is 32.4μW,and the area is 115μm2.Compared to compound domino logic,the proposed circuit can reduce delay and power dissipation by 55% and 38%,respectively.

Key words: high fan-indomino logichigh performancekeeper transistor

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    Received: 18 August 2015 Revised: 02 June 2008 Online: Published: 01 September 2008

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      Feng Chaochao, Chen Xun, Yi Xiaofei, Zhang Minxuan. An Improved High Fan-in Domino Circuit for High Performance Microprocessors[J]. Journal of Semiconductors, 2008, In Press. Feng C C, Chen X, Yi X F, Zhang M X. An Improved High Fan-in Domino Circuit for High Performance Microprocessors[J]. J. Semicond., 2008, 29(9): 1740.Export: BibTex EndNote
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      Feng Chaochao, Chen Xun, Yi Xiaofei, Zhang Minxuan. An Improved High Fan-in Domino Circuit for High Performance Microprocessors[J]. Journal of Semiconductors, 2008, In Press.

      Feng C C, Chen X, Yi X F, Zhang M X. An Improved High Fan-in Domino Circuit for High Performance Microprocessors[J]. J. Semicond., 2008, 29(9): 1740.
      Export: BibTex EndNote

      An Improved High Fan-in Domino Circuit for High Performance Microprocessors

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-16
      • Revised Date: 2008-06-02
      • Published Date: 2008-09-03

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